Charge Traps and Emission Kinetics in LuAP:Ce

Abstract

In this contribution we demonstrate the influence of shallow charge traps on emission kinetics of LuAlO3:Ce(3+) (LuAP:Ce) scintillator. Shallow traps through their interference with the recombination process not only introduce into the emission time profiles long components (afterglow) but also can change the rising and decaying parts of time profiles. The lifetime of excited Ce(3+) ion in LuAP crystal is ^ 18 ns, while the excitation at 78 nm leads to the emission described by 21.5 and 1.22 as decay and rise time constants, respectively. Furthermore, temperature dependence of time profile shapes is observed. The analysis of emission kinetics measured against temperature shows that observed features can be explained in terms of a trap described by the following parameters: E = 0.142 eV and s = 6.087 x 10(exp 10/s.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2001
Accession Number
ADP011900

Entities

People

  • A. J. Wojtowicz
  • J. Glodo

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Charge Carriers
  • Charged Particles
  • Crystals
  • Electronic Mail
  • Emission
  • Energy
  • Equations
  • European Communities
  • Excitation
  • Fungi
  • High Energy
  • Ions
  • Materials
  • Single Crystals
  • Synchrotron Radiation
  • Technical Information Centers

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Pulsed Power and Plasma Physics.