On Growth and Dielectric Properties of Ca4GdO(BO3)3 Single Crystals

Abstract

Single crystals of Ca4GdO(BO3)3 (CGBO) have been grown from a melt by the Czochralski pulling method making use 010 seed orientation. Defects, like dislocation were investigated. Chemical methods were developed on various planes of crystals, in order to reveal the nature and the distribution of these defects. Dielectric measurements in frequency range 20Hz - 13 MHz in three main crystallographic directions were curried out. The values of elastic and piezoelectric coefficients were calculated for the first mode of piezoelectric vibration in each direction.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2001
Accession Number
ADP011930

Entities

People

  • Andrzej Klos
  • Anna Pajaczkowska
  • Czeslaw Pawlaczyk
  • Ewa Markiewicz

Organizations

  • Institute of Electronic Materials Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Coefficients
  • Crystal Structure
  • Crystals
  • Dielectric Permittivity
  • Dielectric Properties
  • Dislocations
  • Electronic Materials
  • Equivalent Circuits
  • Frequency
  • High Temperature
  • Materials
  • Measurement
  • Optical Materials
  • Polishes
  • Single Crystals
  • Three Dimensional
  • Vibration

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.