Spontaneous Formation and Stability of GaP Cage Structures: A Theoretical Prediction of a New Fullerene

Abstract

We report the spontaneous formation of a GaP fullerene cage in ab-initio Molecular Dynamics simulations starting from a bulk fragment. A systematic study of the geometric and electronic properties of neutral and ionized III-V (GaP, GaAs, AlAs, AlP) clusters suggests the stability of hetero-fullerenes formed by compounds with zinchlend bulk structure. Our prediction is supported by several indicators: these clusters show closed electronic shells and relatively large energy gaps; the ratio between the cohesive energy per atom in the cluster and in the bulk is very close to the value found for carbon fullerenes of the same size; the clusters are thermally stable up to a temperature range of 1500-2000 K and they do not dissociate when ionized.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2001
Accession Number
ADP012138

Entities

People

  • Annalisa Fasolino
  • Francesco Buda
  • Valentina Tozzini

Organizations

  • Radboud University Nijmegen

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bulk Semiconductors
  • Chemical Analysis
  • Chemical Compounds
  • Chemistry
  • Computational Chemistry
  • Energy Gaps
  • Fullerenes
  • Graphitic Materials
  • Mass Spectrometry
  • Materials
  • Materials Science
  • Metastable State
  • Molecular Dynamics
  • Physics
  • Semiconductors
  • Spectra
  • Thermal Stability

Fields of Study

  • Physics

Readers

  • Quantum Chemistry
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics