Electrical Property of Vertically Grown Carbon Nanotube and Its Application to the Nanofunctional Devices

Abstract

A highly ordered porous alumina array which hole size is decreased down to 20nm was fabricated by a two step anodization method. Carbon Nanotube was grown vertically with thermal CVD at 6OO-7OO degrees C. By using rapid thermal annealing method, low-ohmic contact was formed between multi wall nanotubes and metal electrode and its resistance shows tens to hundreds ohms. The alumina layer which is existed between nanotube and electrode acts as a barrier for conductance. The resistance of carbon nanotube shows the temperature(T exp-1) dependence at 4.21K < T < 19.9K and semiconducting behavior at this temperature region.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2001
Accession Number
ADP012153

Entities

People

  • Eunju Bae
  • Inkyeong Yoo
  • Jaeuk Chu
  • Kwangseok Jeong
  • Wonbong Choi

Organizations

  • Jeonbuk National University

Tags

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Anodizing
  • Carbon Nanotubes
  • Diameters
  • Electrical Properties
  • Electron Microscopy
  • Electrons
  • Films
  • Fullerenes
  • Graphene
  • Graphitic Materials
  • Materials
  • Materials Processing
  • Metal-Semiconductor Junctions
  • Nanomaterials
  • Oxide Films
  • Shape

Readers

  • Nanocomposite Materials Science
  • Thin Film Deposition Science.