Nanodevice Fabrication on Hydrogenated Diamond Surface Using Atomic Force Microscope

Abstract

Nanofabrication on a hydrogen-terminated diamond surface is performed using an atomic force microscope (AFM) anodization. Locally insulated areas less than 30 nm are successfully obtained. Side-gated field effect transistors (FETs) are fabricated using the local anodization, and they operate successfully. Single hole transistors composed of one side-gated FET and two tunneling junctions are also fabricated and operate at liquid nitrogen temperature (77 K).

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2001
Accession Number
ADP012171

Entities

People

  • Hiroshi Kawarada
  • Hokuto Seo
  • Kenta Sugata
  • Minoru Tachiki
  • Tohru Fukuda

Organizations

  • Waseda University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Anodizing
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Diamond Films
  • Dielectrics
  • Fabrication
  • Field Effect Transistors
  • Films
  • Materials
  • Materials Processing
  • Materials Science
  • Microscopes
  • Nanomaterials
  • Nanoscale Devices
  • Nanotechnology
  • Semiconductors
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Nanoscale Plasmonic Nanotechnology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene