Density Functional Based Tight Binding Study of C2 and CN Deposition on (100) Diamond Surface

Abstract

A density-functional based tight binding method was used to study elementary steps in the growth of ultrananocrystalline (UNCD) diamond. It was shown previously that C(2) dimers are the dominant growth species in hydrogen-poor argon plasmas. Recent experimental evidence shows that nitrogen addition to the plasma profoundly changes the morphology of the UNCD film. CN species are believed to play a major role. Reactions of C(2) and CN molecules with reconstructed diamond (100) surfaces were studied. A single CN prefers an end-on attachment to a surface atom on the unhydrided (100) surface with its C end down. It is shown how further C(2) addition to the surface leads to CN-mediated diamond growth and how the CN species remain on top of the growing diamond layer.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2001
Accession Number
ADP012173

Entities

People

  • John Carlisle
  • Larry A. Curtiss
  • Michael Sternberg
  • Peter Zapol
  • Thomas Frauenheim

Organizations

  • Argonne National Laboratory

Tags

Communities of Interest

  • C4I

DTIC Thesaurus Topics

  • Adsorption
  • Atoms
  • Chemistry
  • Computational Chemistry
  • Computational Science
  • Diamond Films
  • Electron Density
  • Electrons
  • Emission Spectra
  • Films
  • Fullerenes
  • Geometry
  • Materials
  • Materials Science
  • Molecular Dynamics
  • Simulations
  • Solid State Physics

Readers

  • Materials Science and Engineering.
  • Quantum Chemistry
  • Thin Film Deposition Science.