Catalyst-Free Growth of Large Scale Ga2O3 Nanowires

Abstract

Large scale of straight Ga2O3 nanowires is grown on a fused silica substrate by a simple catalyst-free CVD method using Ga metal and N2/H2O reactants. The Ga2O3 nanowires with diameters ranging from 60 to 150 nm can be as long as several micrometers. XRD and TEM analyses indicate that the Ga2O3 nanowires exhibit a monoclinic structure. PL characteristic of the Ga2O3 nanowires shows a UV emission of 375 nm at room temperature.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2001
Accession Number
ADP012191

Entities

People

  • Franklin C. Hong
  • Jih-jen Wu
  • Ko-wei Chang
  • Liang-yih Chen
  • Sai-chang Liu

Organizations

  • National Cheng Kung University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Base Pressure
  • Catalysts
  • Chemical Engineering
  • Diameters
  • Diffraction
  • Energy Bands
  • High Temperature
  • Materials
  • Measurement
  • Nanocomposites
  • Optical Materials
  • Optical Properties
  • Optoelectronic Devices
  • Physical Properties
  • Raman Spectra
  • Spectra

Readers

  • Defense Acquisition Program Management
  • Nanocomposite Materials Science
  • Thin Film Deposition Science.