Temperature Dependence of Electroresistivity, Negative and Positive Magnetoresistivity of Graphite/Diamond Nanocomposites and Onion-Like Carbon

Abstract

Here we present the result of measurements of electrical resistivity and magnetoresistivity of graphite/diamond nanocomposites (GDNC) and onion-like carbon (OLC) prepared by vacuum annealing of nanodiamond (ND) at various fixed temperatures. GDNC contain particles with a diamond core covered by closed curved graphitic shells. The electrical resistivity of annealed ND is characteristic of systems with localized electrons and can be described in terms of variable hopping-length hopping conductivity (VHLHC). The magnetoresistivity of OLC is negative in the range of field O < B < 2 T, and is positive at B > 2 T. The conduction carrier concentration for OLC samples was estimated in the framework of the theory of negative magnetoresistance in semiconductors in the hopping conduction region. The free path length for conducting electrons at liquid helium temperature was estimated from the data on positive magnetoresistivity. The localization length of current carriers was also estimated. The determined parameters are in agreement with proposed structure model of OLC constructed using HRTEM data.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2001
Accession Number
ADP012211

Entities

People

  • Alexander V. Okotrub
  • Anatoliy I. Romanenko
  • Olga B. Anikeeva
  • Vladimir L. Kuznetsov
  • Yuriy V. Butenko

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Annealing
  • Carbon Nanotubes
  • Chemical Compounds
  • Electrical Conductivity
  • Electrical Resistance
  • Electron Microscopes
  • Equations
  • Fullerenes
  • Graphitic Materials
  • Magnetic Fields
  • Magnetic Properties
  • Materials
  • Materials Laboratories
  • Materials Science
  • Nanocomposites
  • Paper
  • Particles

Fields of Study

  • Materials science

Readers

  • Housing Policy Studies in Military Families with Privatization and Telomerase Allowance Units, Multi-Family Housing, and Telomere Lengths.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics