Surfactant Templated Assembly of Hexagonal Mesostructured Semiconductors Based on Ge4Q104- (Q=S, Se) and Pd2+ and Pt2+ Ions

Abstract

Mesostructured semiconducting non-oxidic materials were prepared by linking Ge4Q10(4-)(Q=S, Se) clusters with the square planar noble metal cations of Pd(2+) and Pt(2+) in the presence of cetylpyridinium surfactant molecules. The use of Pt(2+) afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8 < E(sub g) < 2.5 eV.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2001
Accession Number
ADP012238

Entities

People

  • Krishnaswamy K. Rangan
  • Mercouri Kanatzidis
  • Pantelis N. Trikalitis

Organizations

  • Michigan State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Assembly
  • Band Gaps
  • Chemical Kinetics
  • Chemistry
  • Energy Bands
  • Materials
  • Materials Science
  • Metals
  • Nanocomposites
  • Optics
  • Raman Spectra
  • Reflection
  • Semiconductors
  • Spectra
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Chemistry
  • Materials science

Readers

  • Analytical Chemistry
  • Electrochemical Engineering/ Fuel Cell Technologies
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene