Composition-Morphology-Property Relations for Giant Magnetoresistance Multilayers Grown by RF Diode Sputtering
Abstract
A series of experiments have been conducted to evaluate the magnetotransport properties of RF diode sputter deposited giant magnetoresistive (GMR) multilayers with either copper or copper-silver-gold nonferromagnetic (NFM) conducting layers. The study revealed that RF diode deposited multilayers utilizing Cu80Ag15Au5 as the NFM conducting layer posses significantly superior giant magnetoresistance to otherwise identical device architectures that used pure copper as the NFM conducting layer. To explore the origin of this effect, copper and Cu80Ag15Au5 films of varying thickness have been grown under identical deposition conditions and their surface morphology and roughness investigated. Atomic force microscopy revealed significant roughness and the presence of many pinholes in thin pure copper films. The surface roughness of the Cu80Ag15Au5 layers was found to be much less than that of pure copper, and the alloying eliminated the formation of pinholes. Molecular statics estimates of activation barriers indicated that both silver and gold have significantly higher mobilities than copper atoms on a fiat copper surface. However, gold is found to be incorporated in the lattice whereas silver tends to segregate (and concentrate) upon the free surface, enhancing its potency as a surfactant. The atomic scale mechanism responsible for silver's surface flattening effect has been explored.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 2001
- Accession Number
- ADP012263
Entities
People
- D. Brownell
- H.N.G. Wadley
- R. A. Hohnson
- W. Zou
- X. W. Zhou
Organizations
- University of Virginia