Epitaxial Growth of Dilute Magnetic Semiconductors: GaMnN and GaMnP

Abstract

Epitaxial growth of the dilute magnetic semiconductors GaMnP and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP films grown with < 4.5% Mn show the preferential formation of the second phases MnP and Mn(5.64)P3, resulting in only a slight deviation from purely diamagnetic behavior. GaMnN films grown on both Al2O3 and Metal-Organic Chemical Vapor Deposition (MOCVD) derived GaN surfaces show strong ferromagnetism when grown with either C codoping or at elevated temperatures to raise the concentration of n-type carriers. Comparable GaMnN films grown under conditions which produce highly resistive material show only paramagnetism, indicating the importance of carrier concentration on the resulting magnetic behavior. The formation of second phases was not observed in the GaMnN material for Mn concentrations less than 9%.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2001
Accession Number
ADP012279

Entities

People

  • Arthur F. Hebard
  • Cammy R. Abernathy
  • Fred Sharifi
  • Mark E. Overberg
  • Stephen Pearton

Organizations

  • University of Florida

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Curie Temperature
  • Electron Spectroscopy
  • Engineering
  • Epitaxial Growth
  • Ferromagnetic Materials
  • Films
  • Magnetic Detectors
  • Magnetic Fields
  • Materials
  • Materials Science
  • Measurement
  • Quantum Properties
  • Semiconductor Devices
  • Semiconductors
  • Universities

Fields of Study

  • Materials science

Readers

  • Powder metallurgy of Titanium alloys.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene