Influence of Domain Structure on Magnetoresistance in Perovskite Manganite Grain Boundary Jnctions

Abstract

We have been able to deduce a temperature dependence of the built-in potential in La(2/3)Sr(1/3)MnO3 grain boundary junctions. This has been performed by trimming a single grain boundary down to 1 micrometer width with a focused ion-beam. We can thereby see the impact of single domain walls on the magnetoresistance and the current-voltage characteristics. We have also demonstrated the effect of averaging as we increased the number of junctions.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2001
Accession Number
ADP012294

Entities

People

  • Anatoli Kadigrobov
  • Robert Gunnarsson
  • Zdravko Ivanov

Organizations

  • National Academy of Sciences of Ukraine

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Curie Temperature
  • Domain Walls
  • Films
  • Grain Boundaries
  • Ion Beams
  • Ions
  • Low Temperature
  • Magnetic Domains
  • Magnetic Fields
  • Magnetic Forces
  • Magnetoresistance
  • Materials
  • Measurement
  • Perovskites
  • Resistance
  • Voltage

Fields of Study

  • Physics

Readers

  • Fluid Dynamics.
  • Integrated Circuit Design and Technology.
  • Superconducting Magnet Technology