A Novel Approach to Obtain GeSbTe-Based High Speed Crystallizing Materials for Phase Change Optical Recording

Abstract

A new approach is proposed to obtain fast crystallizing materials based on a conventional GeSbTe alloy for rewritable phase change optical data storage. By means of co-sputtering, Ge1Sb2Te4 alloy was mixed with Sn1Bi2Te4 alloy so as to form pseudo-binary alloys (Ge1Sb2Te4)(1-x)(Sn1Bi2Te4))(x) (x is a mole fraction). From structural and optical analyses of the Co sputtered and annealed alloy films, the formation of stable crystalline single phases was observed along with a Vegard's law behavior, suggesting a homogeneous mixing of the two alloys. By use of a 4 layered disk with (Ge1Sb2Te4)0.85(Sn1Bi2Te4)0.15 recording layer, a preliminary test of writing and erasing was carried out and the results were compared with the case of the disk with Ge1Sb2Te4 recording layer. The (Ge1Sb2Te4)0.85(Sn1Bi2Te4)0.15 recording layer was found to yield markedly higher erasibility, especially with increasing disk linear velocity.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2001
Accession Number
ADP012318

Entities

People

  • Byung-ki Cheong
  • Sung J. Park
  • Tae Y. Lee
  • Taek S. Lee
  • Won M. Kim

Organizations

  • Seoul National University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Alloys
  • Band Gaps
  • Chemical Compounds
  • Crystallization
  • Data Storage Systems
  • Diffraction
  • Energy Bands
  • Engineered Materials
  • Engineering
  • Films
  • Materials
  • Materials Science
  • Metamaterials
  • Optical Storage
  • Spectra
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Materials Science (Mechanical Engineering).
  • Semiconductor Device Technology
  • Thin Film Deposition Science.