Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

Abstract

InGaAsP/InP multiple quantum wells have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics was investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blue shift was observed. SiN4, SiO2 and SOG were used for the dielectric layer to create the vacancies. All samples were annealed by rapid thermal annealing (RTA). The results indicate that the band gap blue shift varies with the dielectric layers and annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAs/InP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the SiN4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012585

Entities

People

  • J. C. Deng
  • Jinyan Zhao
  • P. Jin
  • X. D. Zhang
  • Z. C. Feng

Tags

DTIC Thesaurus Topics

  • Annealing
  • Argon Lasers
  • Band Gaps
  • Crystals
  • Electron Transitions
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Impurities
  • Ion Lasers
  • Materials
  • Materials Science
  • Quantum Wells
  • Semiconductors
  • Spectra
  • Technical Information Centers
  • Universities

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Chemistry
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing