The Role of Nitrogen-Induced Localization and Defects in InGaAsN (2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

Abstract

Nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (approx. 1.1 eV bandgap) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Independent of growth technique, annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (>> mean free path) material inhomogeneities. Comparing solar cell quantum efficiencies for devices grown by MBE and MOCVD, we find significant electron diffusion in the MBE material (reversed from the hole diffusion occurring in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a universal', nitrogen-related defect.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012587

Entities

People

  • A. A. Allerman
  • C. H. Seager
  • J. F. Klem
  • R. M. Sieg
  • Steven R. Kurtz

Organizations

  • Sandia National Laboratories

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Masses
  • Annealing
  • Cells
  • Chemical Vapor Deposition
  • Efficiency
  • Electron Mobility
  • Electrons
  • Low Temperature
  • Materials
  • Mobility
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Point Defects
  • Quantum Efficiency
  • Solar Cells
  • Transport Properties
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing