Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition

Abstract

The incorporation of a high percentage of nitrogen in the GaAs lattice has been the subject of recent interest to reduce the bandgap while maintaining the nearly lattice matched condition to GaAs. We will report on the metalorganic chemical vapor deposition (MOCVD) of GaAsN using trimethylgallium (TMG), tertiarybutylarsine (TBA) and dimethylhydrazine (DMHy) organometallic sources in a hydrogen-free carrier gas. A nitrogen concentration as high as 8% in GaAsN was achieved. The effect of nitrogen concentration on the structural, optical and surface properties of GaAsN films will be discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012588

Entities

People

  • Baxter Moody
  • J. C. Roberts
  • M. B. Aumer
  • P. Barletta
  • S. F. Leboeuf

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Advanced Materials
  • Chemical Compounds
  • Chemical Vapor Deposition
  • Engineered Materials
  • Engineering
  • Flow
  • High Temperature
  • Laser Diodes
  • Long Wavelengths
  • Materials
  • Materials Engineering
  • Materials Science
  • Measurement
  • Metamaterials
  • Optoelectronic Devices
  • Solar Cells
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology