InAsN Grown by Plasma-Assisted Gas Source MBE

Abstract

We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy. It is found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed from infrared reflectivity and Hall measurement on these degenerate InAsN samples. The sizeable increase on electron effective mass is consistent with the theoretical predictions based on band-anticrossing model.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012592

Entities

People

  • Ding-kang Shih
  • Hao-hsiung Lin
  • T. R. Yang
  • Tso-yu Chu

Organizations

  • National Taiwan University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Band Gaps
  • Carrier Mobility
  • Coefficients
  • Conduction Bands
  • Crystal Growth
  • Crystal Lattices
  • Crystals
  • Dispersion Relations
  • Energy Bands
  • Materials
  • Molecular Beam Epitaxy
  • Optical Properties
  • Semiconductors
  • Spectra
  • Transition Temperature
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene