Nature and Formation of Non-Radiative Defects in GaNAs and InGaAsN

Abstract

The optically detected magnetic resonance (ODMR) technique has been employed to examine the nature and formation mechanism of non-radiative defects in GaNAs and InGaAsN. In both alloys, two defects were observed and were shown to he deep-level, non-radiative recombination centers. One of the defects has been identified as a complex involving an As(sub Ga) antisite. These two defects gain more importance with increasing N composition up to 3%, presumably due to an increase in their concentration. With a further higher N composition, the defects start to lose importance in carrier recombination that is attributed to an increasingly important role of other new non-radiative channels introduced with a high N composition. On the other hand, effect of In composition up to 3% seems to be only marginal. Both defects were shown to be preferably introduced in the alloys during low-temperature growth by molecular beam epitaxy (MBE), but can be rather efficiently removed by post-growth rapid thermal annealing.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012593

Entities

People

  • H. P. Xin
  • I. A. Buyanova
  • N. Q. Thinh
  • P. N. Hai
  • W. M. Chen

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Frequency
  • High Temperature
  • Hyperfine Structure
  • Intensity
  • Low Temperature
  • Magnetic Fields
  • Magnetic Resonance
  • Materials
  • Microwave Frequency
  • Nuclear Spins
  • Optoelectronic Devices
  • Quantum Properties
  • Quantum Wells
  • Resonance
  • Semiconductors
  • Spectra
  • Spin Resonance

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Systems Analysis and Design