Near-Field Photoluminescence Spectroscopy of Localized States in InGaAsN Alloys

Abstract

We used near-field magneto-photoluminescence scanning microscopy to study structural and optical properties of quantum-dot-like compositional fluctuations in GaAsN and InGaAsN alloys. We show that these fluctuations manifest themselves by the appearance of narrow emission lines (half width 0.5-2 meV) at temperatures below 70 K. We estimated the size, density, and nitrogen excess of individual compositional fluctuations (clusters), revealing phase-separation effects in the distribution of nitrogen in GaAsN and InGaAsN. We found a dramatic difference in the Zeeman splitting of cluster lines between GaAsN and InGaAsN, indicating a strong effect of In on the exciton g-factor.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012595

Entities

People

  • A. M. Mintairov
  • J. L. Merz
  • P. A. Blagnov
  • T. Kosel
  • V. M. Ustinov

Organizations

  • University of Notre Dame

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bulk Semiconductors
  • Contrast
  • Electron Microscopes
  • Electron Microscopy
  • Emission
  • Energy Bands
  • Magnetic Fields
  • Materials
  • Microscopes
  • Microscopy
  • Near Field
  • Phase Separation
  • Quantum Dots
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Marine Ecotoxicology
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots