Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

Abstract

Three sets of self-organized InAs quantum dots (QDs) embedded in an external InGaAs quantum well samples were grown by solid source molecular beam epitaxy (MBE). By modifying Indium composition profile within quantum well (QW) region, it's found the photoluminescence emission from quantum dots can be greatly enhanced when employing a graded quantum well to surround QDs. This quantum dots in a graded quantum well structure also preserves the long wavelength (1.3 micrometers) spectrum requirement for the future use in optoelectronics devices.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012599

Entities

People

  • D. Pal
  • D. Pan
  • E. Towe
  • Larry Chen
  • V. G. Stoleru

Organizations

  • University of Virginia

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Argon Lasers
  • Band Structures
  • Conduction Bands
  • Emission
  • Energy Bands
  • Ground State
  • Heat Of Activation
  • Lasers
  • Long Wavelengths
  • Low Temperature
  • Materials
  • Quantum Dot Lasers
  • Quantum Dots
  • Quantum Wells
  • Semiconductors
  • Transitions
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Nanocomposite Materials Science
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing