GaAs Photodetector for X-ray Imaging
Abstract
We describe briefly a cheap and non polluting technique to grow epitaxial GaAs layers several hundred microns thick in a matter of hour. Detectors consisting of a p(+)/i/n(+) structure have been realised with these layers and we present their characteristics obtained from current-voltage, capacitance-voltage measurements as well as their response versus the energy and flux of X-rays.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2002
- Accession Number
- ADP012607
Entities
People
- G. C. Sun
- H. Samic
- J. C. Bourgoin
- S. Gautrot
- V. Donchev