Scatterometry for Lithography Process Control and Characterization in IC Manufacturing
Abstract
As modern circuit architecture features steadily decrease in size, more accurate tools are needed to meaningfully measure critical dimensions (CD). As a general rule, a metrology tool should be able to measure 1/10 of the product tolerance. An emerging technology for high speed, high accuracy CD measurement is scatterometry. This paper describes scatterometry-based measurements of metal features of 350 nm with a space of 450 nm (pitch of 800 nm) on top of a complicated layer stack and compares them with the results of an atomic force microscope (AFM). We also looked into lithography cell monitoring and trending by measuring CDs on 3 daily litho cell monitors over a period of 40 days. Our long term results show excellent agreement with those of a scanning electron microscope (CD-SEM).
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2002
- Accession Number
- ADP012609
Entities
People
- Christopher J. Raymond
- Mike Littau
- Yiorgos Kostoulas