Structural Properties and Doping of Zn(1-x)(Mg,Li)(x)O Materials

Abstract

The possibility of the solid solutions with MgO provides the opportunity in ZnO/ZnMgO quantum well structures. The recent observation that n-type conductivity in ZnO is due to hydrogen doping open the avenue for p-doping to form p-n junction devices in ZnO. We report on the synthesis and structural properties of Zn (Mg, Li)O. The possibility of p-doping by P has been explored.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012610

Entities

People

  • A. Hidalgo
  • M. S. Tomar
  • R. E. Melgarejo
  • Ram S. Katiyar

Organizations

  • University of Puerto Rico at Mayaguez

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Reactions
  • Diffraction
  • Films
  • Materials
  • Optoelectronic Devices
  • Physics
  • Raman Spectra
  • Raman Spectroscopy
  • Semiconductors
  • Spectra
  • Spin Coatings
  • Structural Properties
  • Substrates
  • Surface Acoustic Waves
  • Thin Films
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing