Comparison of AlGaAs Oxidation in MBE and MOCVD Grown Samples

Abstract

Simultaneous wet-thermal oxidation of MBE and MOCVD grown Al(x)Ga(1-x)As layers (x = 0.1 to 1.0) showed that the epitaxial growth method does not influence the oxidation rate. Nearly identical oxidation depths were measured for samples grown by both techniques. It was found, however, that the oxidation rate is very sensitive to non-uniformities in the Al concentration in the Al(x)Ga(1-x)As layers, and that maintaining consistent and uniform Al concentrations is critical to achieving reproducible oxidation rates. The study also showed that the oxidation rate was not affected by the V/III ratio during growth nor by impurities at concentrations less than or equal to 10 ppm.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012613

Entities

People

  • A. A. Allerman
  • A. Roshko
  • D. W. Readey
  • K. A. Bertness
  • Yunhui Chen

Organizations

  • National Institute of Standards and Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Electron Microscopy
  • Epitaxial Growth
  • Field Effect Transistors
  • Field Emission
  • Flow Rate
  • Impurities
  • Mass Spectroscopy
  • Massachusetts
  • Materials
  • Molecular Beam Epitaxy
  • Optoelectronic Devices
  • Oxidation
  • Scanning Electron Microscopy
  • Semiconductors
  • Surface Emitting Lasers
  • Surface Roughness

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.