Hole Concentration vs. Mn Fraction in a Diluted (Ga,Mn)As Ferromagnetic Semiconductor

Abstract

The dependence of the hole density on that of Mn sites in Ga(1-x)Mn(x)As is studied within a mean-field approach to the hole-mediated ferromagnetism in III-V Mn-based semiconductor compounds. We parametrize the hole concentration, p, as a function of the fraction of Mn sites, x, in terms of the product m(*) (J(sub pd))(sup 2) (where m(*) is the hole effective mass and J(sub pd) is the Kondo-like hole/local-moment coupling), and the critical temperature T(sub c). By fitting m(*) (J(sub pd))(sup 2) to experimental data for T(sub c)(x), we establish the dependence of p on x, which is interpreted in terms of a reentrant metal-insulator transition taking place in the hole gas.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012614

Entities

People

  • J. Castro
  • L. E. Oliveira
  • Raimundo Dos Santos

Organizations

  • University of Campinas

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Couplings
  • Critical Temperature
  • Curie Temperature
  • Experimental Data
  • Fermi Levels
  • Impurities
  • Low Temperature
  • Magnetic Fields
  • Magnetization
  • Materials
  • Measurement
  • Quantum Computing
  • Quantum Properties
  • Semiconductors
  • Spin-Orbit Interaction
  • Technical Information Centers
  • Transport Properties

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene