Photoluminescence from Er-Implanted 4H and 6H-SiC

Abstract

Erbium (Er) ions were implanted into 4H and 6H silicon carbide (SiC). The temperature-dependent photoluminescence (PL) and PL lifetime were characterized. The optimum annealing temperature for SiC: Er were 1600 deg C. PL intensity decreased at 1700 deg C, and the bandedge luminescence changed in relation to the luminescence of Er(3+). Thermal quenching of the luminescence of was suppressed by using SiC with a wide band gap as a host material. The Er(3+)-PL was observed at room temperature (RT). We monitored the auger effect that is believed to be the main cause of the thermal quenching process and concluded that, in the temperature range 15 K to 70 K, the thermal quenching process has a close relation to nonradiative recombination from the first excited state (sup 4)I13/2) to the ground state (sup 4)I15/2) of Er(3+).

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012615

Entities

People

  • Shin-ichiro Uekusa
  • Takayuki Goto

Organizations

  • Meiji University

Tags

Communities of Interest

  • Advanced Electronics
  • C4I

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Annealing
  • Band Gaps
  • Base Pressure
  • Communication Systems
  • Conduction Bands
  • Energy
  • Energy Bands
  • Energy Levels
  • Energy Transfer
  • Engineering
  • Heat Of Activation
  • Low Temperature
  • Luminescence
  • Materials
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology