Calculations of Dielectric Constant for AlGaInAs Quaternary Semiconductor Alloy in the Transparent Region and Above (O.4-4.OeV)

Abstract

The modeling of the spectral behavior of the refractive index of AlGaInAs quaternary III-V semiconductor alloy in the energy range from 0.4 to 4 eV, including the transparent region, is presented. The extended model of interband transition contributions incorporates not only the fundamental absorption edge contribution to the dielectric function, but also contributions from higher energy and indirect transitions. It is demonstrated that indirect energy transitions must be included in the calculations of the complex dielectric function of the material in the transparent region. Indirect transitions from different critical points in the Brillouin zone are treated separately. The comparison between the theoretical refractive indices and the experimental data for AlGaInAs alloy is presented. These calculations have been applied to the design of Bragg mirrors with the highest refractive index contrast for heterostructure lasers.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012619

Entities

People

  • A. Christou
  • M. Linnik

Organizations

  • University of Maryland

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Band Gaps
  • Band Structures
  • Binary Alloys
  • Compound Semiconductors
  • Dielectric Permittivity
  • Dispersion Relations
  • Distributed Bragg Reflectors
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Materials
  • Optical Properties
  • Refraction
  • Refractive Index
  • Semiconductors
  • Universities

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Nanofabrication and Microfabrication.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Directed Energy
  • Microelectronics