Annealing of Some II-IV-V2 Crystals in the Vapor of Volatile Constituents

Abstract

Experiments on annealing of CdGeAs2-, CdSnAs2- and ZnGeP2-crystals in the vapor of volatile constituents were carried out. Conductivity and Hall effect measurements were performed to characterize the modification of electrical properties, caused by the interaction of the crystal with the gas phase during annealing. Literature data and the results of the present work are discussed based on the results of a quasi-chemical analysis. This yielded that the results of annealing depends essentially on both the conditions of the experiment and the initial imperfection of the crystal. The most probable native structural defects becoming apparent under the annealing were the following: for CdSnAs2 - Sn(sub Cd), V(sub As); for CdGeAs2 - V(sub As, V(sub cd), Cd(sub Ge), Ge(sub Cd); for CdSiAs2 - Si(sub As), V(sub As); for CdSiP2 - V(sub Cd), V(sub p); for ZnGeP2 - Zn(sub Ge), Ge(sub Zn), V(sub Zn), V(sub p); and for ZnSnP2 - Zn(sub Sn), Sn(sub Zn), V(sub Zn), V(sub p).

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012620

Entities

People

  • Nils C. Fernelius
  • Olga V. Voevodina
  • Svetlana A. Bereznaya
  • Valeriy G. Voevodin
  • Zoya V. Korotchenko

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Charge Carriers
  • Chemical Analysis
  • Chemical Reactions
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Electrical Properties
  • Electrons
  • Equations
  • Hall Effect
  • Heat Treatment
  • High Pressure
  • Materials
  • Mobility
  • Point Defects
  • Semiconductors

Readers

  • Thin Film Deposition Science.