Radiative Recombination Processes of Thermal Donors in Silicon
Abstract
There is a recent, renewed attention on the possible development of optical emitters compatible with silicon microelectronic technology and it has been recently shown that light emitting diodes could be manufactured on dislocated silicon, where dislocations were generated by plastic deformation or ion implantation. Among other potential sources of room temperature light emission, compatible with standard silicon-based ULSI technology, we have studied old thermal donors (OTD), as the origin of their luminescence is still matter of controversy and demands further investigation. In this work we discuss the results of a spectroscopical study of OTD using photoluminescence (PL) and Deep Level Transient Spectroscopy (DLTS) on standard Czochralsky (Cz) silicon samples and on carbon-doped samples. We were able to show that their main optical activity, which consists of a narrow band at 0.767 eV (P line), is correlated to a transition from a shallow donor level of OTD to a deep level at E(sub v)+0.37 eV which is tentatively associated to C-O complexes. As we have shown that the P line emission persists at room temperature, we discuss about its potentialities to silicon in optoelectronic applications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2002
- Accession Number
- ADP012621
Entities
People
- A. Castaldini
- E. Leoni
- M. Acciarri
- S. Binetti
- S. Pizzini
Organizations
- University of Bologna