Annealing Effect on the Nonradiative Carrier Recombination in AlGaAs/GaAs Investigated by a Piezoelectric Photothermal Spectroscopy

Abstract

Electron non-radiative recombination process of photoexcited carriers in as-grown and annealed n-Al0.2Ga0.8As/GaAs hetero-structure samples are investigated by using a piezoelectric photothermal spectroscopy (PPTS). The PPT signal above the band-gap energy of GaAs substrate decreased when the sample was annealed at 815 deg C. In the frequency dependent measurements, the deviations from 1/f linear function are clearly observed in the AlGaAs/GaAs samples. This critical deviation frequency was found to shift to the lower frequency region by annealing. Our experimental results are explained by assuming that the sample annealing generates an unknown deep level in AlGaAs epitaxial layer region and this level effectively traps the photoexcited carriers non-radiatively.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012622

Entities

People

  • Atsuhiko Fukuyama
  • Hiroaki Nagatomo
  • Tetsuo Ikari
  • Yoshito Akashi

Organizations

  • University of Miyazaki

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Annealing
  • Band Gaps
  • Bipolar Junction Transistors
  • Compound Semiconductors
  • Electric Fields
  • Electron Transitions
  • Electrons
  • Energy Bands
  • Frequency
  • Intensity
  • Ion Implantation
  • Materials
  • Semiconductors
  • Signal Generation
  • Spectroscopy
  • Thermal Diffusion
  • Transitions

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics