On the scaling of Exciton and Impurity Binding Energies and the Virial Theorem in Semiconductor Quantum Wells and Quantum-Well Wires

Abstract

We have used the variational and fractional-dimensional space approaches in a study of the virial theorem value and scaling of the shallow-donor binding energies versus donor Bohr radius in GaAs-(Ga, Al)As semiconductor quantum wells and quantum-well wires. A comparison is made with previous results with respect to exciton states. In the case the donor ground-state wave function may be approximated by a D-dimensional hydrogenic wave function, the virial theorem value equals 2 and the scaling rule for the donor binding energy versus quantum-sized Bohr radius is hyperbolic, both for quantum wells and wires. In contrast, calculations within the variational scheme show that the scaling of the donor binding energies with quantum-sized Bohr radius is in general nonhyperbolic and that the virial theorem value is nonconstant.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012624

Entities

People

  • L. E. Oliveira
  • M. De Dios-leyva

Organizations

  • University of Campinas

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Conduction Bands
  • Dielectric Permittivity
  • Electrons
  • Energy
  • Energy Bands
  • Excitons
  • Free Electrons
  • Ground State
  • Heterojunctions
  • Impurities
  • Materials
  • Quantum Wells
  • Quantum Wires
  • Semiconductors
  • Technical Information Centers
  • Wave Functions

Readers

  • Calculus or Mathematical Analysis
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Space