Exciton Diamagnetic Shifts and Magnetic Field Dependent Linewidths in Ordered and Disordered InGaP Alloys

Abstract

We have measured the diamagnetic shifts and photoluminescence linewidths of excitonic transitions in ordered and disordered In(0.48)Ga(0.52)P alloys, lattice matched to GaAs, in pulsed magnetic fields at 4 and 76 K. The pulsed magnetic field ranged between 0 and 50 T. The variations diamagnetic shifts with magnetic field in disordered and weakly ordered samples are considerably smaller than those calculated using a free exciton model. For a given magnetic field, the value of the diamagnetic shifts are found to increase with increasing order parameter. Furthermore, for all samples, the diamagnetic shifts at 76 K are larger than at 4 K suggesting that the excitons are strongly localized.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012627

Entities

People

  • E. D. Jones
  • G. Coli
  • K. K. Bajaj
  • S. A. Crooker
  • Yong Zhang

Organizations

  • Sandia National Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Structure
  • Detectors
  • Energy
  • Energy Bands
  • High Resolution
  • Low Temperature
  • Magnetic Fields
  • Materials
  • New Mexico
  • Optical Fibers
  • Photoluminescence
  • Renewable Energy
  • Semiconductors
  • Spectra
  • Technical Information Centers
  • United States
  • Valence Bands

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene