Luminescence of Quasi-2DEG in Heterostructures Based on PbS Films

Abstract

The paper deals with the problem of luminescence due to non-equilibrium charge carriers transfer between the quasi-2D electron system localized in the space-charge region of the heterostructures based on lead sulfide films (up to 3 micrometers thickness) and zinc selenide substrates surrounded by the wide gap semiconductor region. The processes of electro- and photoluminescence are studied, the band diagram is proposed and the main parameters of the structure PbS/quasi-2DEG/ZnSe are calculated.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012629

Entities

People

  • G. Khlyap

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Compound Semiconductors
  • Conduction Bands
  • Electric Fields
  • Energy Bands
  • Energy Levels
  • Heterojunctions
  • Light Sources
  • Luminescence
  • Materials
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Space Charge

Fields of Study

  • Materials science

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space