Novel AlGaAs/CaF2 SESAM Device for Ultrashort Pulse Generation

Abstract

A novel ultrabroadband AlGaAs/CaF2 semiconductor saturable absorber mirror (SESAM) covering nearly the entire Ti: sapphire gain spectrum is demonstrated. This device supports sub-10-fs of a laser. In contrast to previous SESAMs of comparable bandwidth, our device can be monolithically grown by molecular beam epitaxy and requires no post-growth processing. GaAs is used as semiconductor saturable absorber material. The high defect concentration of the material is due to the lattice-mismatched growth on a fluoride surface with (111) orientation. With a time response of 1.2 ps for carrier trapping, a saturation fluence of 36 micro-J/sq cm and a modulation depth of up to 2.2% , the GaAs saturable absorber is well-suited for all optical switching in SESAM devices used for ultrashort pulse generation.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012632

Entities

People

  • Lukas Gallmann
  • Markus Haiml
  • Silke Schon
  • Ursula Keller

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Bandwidth
  • Chemistry
  • Electronics
  • Laser Pulses
  • Materials
  • Mirrors
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Optical Switching
  • Physics
  • Reflection
  • Reflectivity
  • Refractive Index
  • Semiconductors
  • Standards

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics