Optical Characterization of IV-VI Mid-Infrared VCSEL

Abstract

PbSe/PbSrSe multiple-quantum-well (MQW) structures and PbSrSe thin films were grown on BaF2 (111) substrates by molecular beam epitaxy (MBE) and characterized by Fourier transform inflated (FTIR) spectrometer. Strong photoluminescence without Fabry-Perot interference fringes was observed even at room temperature from the MQW structures. The peak energies for the MQW structures with different well widths shifted to high energy with increasing temperature. The absorption edge of PbSrSe layer was determined by transmission spectra. Meanwhile, we designed and fabricated lambda-4.1 micrometers MQW vertical cavity surface emitting laser (VCSEL). A power output of 40 mW was obtained at room temperature. The room temperature threshold pump density is 200 kW/sq cm.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012633

Entities

People

  • Ashabari Majumdar
  • Fang Zhao
  • Hui Wu
  • P. J. Mccann
  • Tongjia Zheng

Organizations

  • University of Oklahoma

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Band Gaps
  • Emission
  • Energy Bands
  • Films
  • High Temperature
  • Laser Diodes
  • Lasers
  • Materials
  • Measurement
  • Optical Properties
  • Quantum Wells
  • Reflection
  • Semiconductors
  • Spectra
  • Thin Films
  • Yag Lasers

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Quantum Computing