Asymmetric Hybrid A1(Ga)SbAs/InAs/Cd(Mg)Se Heterostructures for Mid-IR LEDS and Lasers
Abstract
A hybrid double heterostructure with large asymmetric band offsets, combining AlAsSb/InAs (as a III-V part) and CdMgSe/CdSe (as a II-VI part), has been proposed as a basic element of a mid-infrared laser structure design. The p-i-n diode structure has been successfully grown by molecular beam epitaxy (MBE) and exhibited an intense long-wavelength electroluminescence at 3.12 micrometers (300 K). A II-VI MBE growth initiation with a thin ZnTe buffer layer prior to the CdMgSe deposition results in a dramatic reduction of defect density originating at the II-VI/III-V interface, as demonstrated by transmission electron microscopy. A less than 10 times reduction of electroluminescence intensity from 77 to 300 K indicates an efficient carrier confinement in the InAs active layer due to high potential barriers in conduction and valence bands, estimated as delta E(sub c) = 1.28 eV and delta E(sub v) ^ 1.6 eV. An increase in the pumping current results in a super-linear raising the EL intensity. The type of band line up at the coherent InAs/Cd(1-x)Mg(x)Se interface is discussed for 0 <- <- 0.2, using experimental data and theoretical estimations within a model-solid theory.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2002
- Accession Number
- ADP012638
Entities
People
- E. V. Ivanov
- K. D. Moiseev
- S V Ivanov
- V. A. Kaygorodov
Organizations
- Russian Academy of Sciences