Optical Constants of Annealed a-Si:H from Transmittance at Normal Incidence

Abstract

We study changes in the optical constants of a-Si:H films caused by the thermal annealing involved in solid phase crystallization. The aim is to examine the growth mechanism since changes in refractive index are most probably caused by a change in the network structure. The refractive index change was studied from interference fringes in transmitted light at normal incidence, and shows differing dependence on temperature in different thermal ranges. DSC measurement was also performed to examine changes in the network structure with temperature. Changes in optical and thermal properties induced by an increase of temperature reveal frequent network changes of a-Si:H below 470 deg C and of a-Si in the range 470 to 570 deg C. We also found crystallization at about 570 deg C, and grain growth shove the crystallization temperature. Knowledge of network changes hi a-Si film allows orientation control by an external seed.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012644

Entities

People

  • Atsutoshi Doi
  • Yoshiyuki Matsumoto

Organizations

  • Kindai University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Annealing
  • Coefficients
  • Critical Temperature
  • Crystallization
  • Energy
  • Films
  • Grain Growth
  • Materials
  • Measurement
  • Optical Properties
  • Refractive Index
  • Thin Films
  • Transition Temperature
  • Transitions
  • Transmittance

Readers

  • Materials Science and Engineering.
  • Optical Physics and Photonics.
  • Thin Film Deposition Science.