High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al(0.2)Ga(0.8)As Blocking Layers

Abstract

InAs/AlGaAs quantum dot infrared photodetectors based on bound-to-bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 micrometers. At 77 K and 4.7 V bias the responsivity was 14 mA/W and the detectivity, D(*), was 10(exp 10) cm Hz (sup 1/2)/W.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012648

Entities

People

  • E. T. Kim
  • Joe C. Campbell
  • O. Baklenov
  • Zhengmao Ye
  • Zhonghui Chen

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Analysis
  • Current Density
  • Detection
  • Electron Density
  • Electron Microscopes
  • Electron Transitions
  • Electrons
  • Fabrication
  • Infrared Radiation
  • Low Noise
  • Materials
  • Materials Science
  • Photodetectors
  • Quantum Dots
  • Radiation
  • Semiconductors
  • Transitions

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing