I-V and C-V Characteristics of nGaAs-nInSb Heterojunctions Obtained by Pulsed Laser Deposition Technique

Abstract

Using pulsed laser deposition technique, nGaAs-nInSb heterojunctions (HJs) are obtained. Their electrical properties are studied. The Current-Voltage Characteristics show that obtained HJs possess rectifying properties. The rectification coefficient depends strongly on the doping level of GaAs substrate. The linear dependence of C(exp -2) (V) curve in Capacitance-Voltage characteristics, as well as the change of photo-response sign with wavelength, indicates that the HJs have abrupt interface, which is, to the best of oar knowledge, a novel result for these HJ materials. The full number of interface states arising due to the lattice mismatch is determined which is in agreement with Hall measurements. Current-Voltage characteristics of obtained His are analogous to those of metal-semiconductor junction. Based on the obtained results the energy band diagrams of nGaAs-nInSb HJ is constructed taking into account the interface states.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012653

Entities

People

  • Karapet E. Avdjian

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Coefficients
  • Electrical Properties
  • Electronics
  • Energy Bands
  • Fabrication
  • Heterojunctions
  • Lasers
  • Materials
  • Metal-Semiconductor Junctions
  • Pulsed Lasers
  • Semiconductor Devices
  • Semiconductor Junctions
  • Semiconductors
  • Solid State Electronics
  • Substrates

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene