Effects of Electric Fields on Cathodoluminescence from II-VI Quantum Well Light Emitting Diodes

Abstract

Effects of electrical bias on the cathodoluminescence (CL) have been investigated for a blue II-VI quantum well (QW) light emitting diode structure of ZnCdMgSe, lattice-matched to InP. In CL wavelength scans, the observed effects include largely reversible changes in QW CL intensity and wavelength and changes in cladding CL intensity. In CL time-based scans, the QW CL intensity showed both immediate and long term changes with bias. Irreversible, degradation-related decreases in QW CL intensity were also observed. Effects of bias on CL were modeled by calculating the rates of carrier production by electron bombardment and the resulting electron and hole currents with different applied bias fields. These model calculations do not explain many of the experimental observations, because the model does not include effects of bias on carrier escape and redistribution in the QW and effects of bias on generation and transport of atomic scale defects.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012654

Entities

People

  • A. Y. Nikiforov
  • G. S. Cargill Iii
  • M. C. Tamargo
  • S. P. Guo
  • Y. C. Chen

Organizations

  • Lehigh University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Cathodoluminescence
  • Distribution Functions
  • Electric Fields
  • Electron Beams
  • Electron Holes
  • Electrons
  • Energy Bands
  • Engineered Materials
  • Laser Diodes
  • Lasers
  • Light Emitting Diodes
  • Light Sources
  • Luminescence
  • Materials
  • Materials Science
  • Metamaterials
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Regression Analysis.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Quantum Computing