Gas Source MBE Growth and Characterization of TlInGaAs/InP DH Structures for Temperature-independent Wavelength LD Application

Abstract

TlInGaAs/InP double-hetero (DH) structures were grown on (100) InP substrates by gas source MBE. The photoluminescence (PL) peak energy variation with temperature decreased with increasing Tl composition. For the DH with a Tl composition of 13%, the PL peak energy varied only slightly with temperature (-0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K). TlInGaAs/InP light emitting diodes with 6% Tl composition were fabricated and the small temperature variation of the electroluminescence peak energy (-0.09 meV/K) was observed at the wavelength around 1.58 micrometers. The results are promising to realize the temperature-independent wavelength laser diodes, which are important in the wavelength division multiplexing (WDM) optical fiber communication systems.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012655

Entities

People

  • Akiko Mizobata
  • Hajime Asahi
  • Hwe-jae Lee
  • Kenta Konishi
  • Osamu Maeda

Organizations

  • Osaka University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Communication Systems
  • Diffraction
  • Distributed Feedback Lasers
  • Education
  • Electron Diffraction
  • Electron Probes
  • Energy
  • Fiber-Optic Communications
  • Gallium Arsenides
  • Laser Diodes
  • Light Emitting Diodes
  • Materials
  • Optical Fibers
  • Semiconductors
  • Technical Information Centers
  • Wavelength Division Multiplexing
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy