Effect of Zn Atom Diffusion in the Active Layer of InGaAlP Visible-LED Investigated by the Piezoelectric Photothermal Spectroscopy

Abstract

It has been reported that Zn atoms diffused from the Zn-doped p-InAlP cladding to the active layer in InGaAlP visible-light-emitting diodes cause a degradation of light output efficiency. A doping effect of the Zn atoms was then investigated using a Piezoelectric Photothermal Spectroscopy from a nonradiative transition point of view. The results indicate that the Zn-doping unexpectedly induces a decrease of the nonradiative component of the electron transitions above the band gap of the active layer. The experimental results are explained by considering that Zn doping cause the increase of both shallow and deep acceptor levels at the same time with the different rate for generation.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012656

Entities

People

  • Atsuhiko Fukuyama
  • Ryuji Ohno
  • Shoichro Sato
  • Tetsuo Ikari
  • Yoshihito Taiji

Organizations

  • University of Miyazaki

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • B Band
  • Band Gaps
  • Chemical Vapor Deposition
  • Conduction Bands
  • Diffusion
  • Distributed Bragg Reflectors
  • Electron Transitions
  • Electrons
  • Energy Bands
  • Intensity
  • Materials
  • Measurement
  • Optical Properties
  • Piezoelectric Transducers
  • Schematic Diagrams
  • Semiconductors
  • Transitions

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene