Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration

Abstract

Ion implantation induced intermixing of GaAs/AlGaAs and InGaAs/AlGaAs quantum wells was studied using low temperature photoluminescence. Large energy shifts were observed with proton implantation and subsequent rapid thermal annealing. Energy shifts were found to be linear as a function of dose for doses as high as ^ 5 x 10(exp 16)/sq cm. Proton implantation and subsequent rapid thermal annealing was used to tune the emission wavelength of InGaAs quantum well lasers as well as detection wavelength of GaAs/AlGaAs quantum well infrared photodetectors (QWIPs). Emission wavelength of lasers showed blue shift whereas detection wavelength of QWIPs was red shifted with intermixing.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012669

Entities

People

  • C. Jagadish
  • H. H. Tan
  • L. V. Dao
  • Lin Fu
  • M. I. Cohen

Organizations

  • University of New South Wales

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Detection
  • Electronic Materials
  • Emission
  • Energy
  • Engineering
  • Implantation
  • Impurities
  • Ion Implantation
  • Low Temperature
  • Materials
  • Materials Engineering
  • Optical Properties
  • Optoelectronic Devices
  • Point Defects
  • Quantum Well Lasers
  • Quantum Wells

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics
  • Quantum Computing