Photo-Assisted MOVPE Growth of ZnMgS on (100) Si

Abstract

This paper presents for the first time photo-assisted Metalorganic vapor phase epitaxial (MOVPE) growth of ZnMgS on Si (100) substrates. The growth was done using dimethylzinc (DMZn), bismethylcyclo-pentadienyl-magnesium ((MeCP)2Mg), and diethylsulfhide (DES) as zinc, magnesium, and sulfur precursors. Epitaxial characterization by X-ray Photoelectron Spectroscopy (XPS), and low - angle X-ray Diffraction (XRD) results are presented. Mg solid phase incorporation is estimated to vary from 0 to 60 percent. The epitaxial nature of the ZnMgS layers has been verified using the low-angle X-ray diffraction eliminating any interference from the Si substrate. It can be shown with this technique that the change in the ZnMgS peak position changes from 27.35 degrees to 26.5 degrees with an increase in Mg incorporation, compared with a Si control sample peak at 27.4 degrees. XRD results obtained have been verified with XPS data. Chlorine doping of the ZnMgS layer was also studied. Concentrations up to 3 x 10(exp 13)/cu cm were observed in the ZnMgS layer. Results of the n (ZnMgS:Cl) - p (Si) diodes fabricated are also presented.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012671

Entities

People

  • Angel Rodriguez
  • David Parent
  • Jeremy Shattuck
  • Peng Li
  • Xiaoguang Zhang

Organizations

  • University of Connecticut

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Computer Science
  • Computers
  • Detectors
  • Diffraction
  • Electrical Engineering
  • Elements
  • Engineering
  • Flat Panel Displays
  • Hall Effect
  • High Resolution
  • Liquid Crystal Displays
  • Low Angles
  • Materials
  • Semiconductors
  • Solid Phases
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene