InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition
Abstract
We describe the operation of lasers having active regions composed of InP self-assembled quantum dots embedded in In(0.5)Al(0.3)Ga(0.2)P grown on GaAs (100) substrates by MOCVD. InP quantum dots grown on In(0.5)Al(0.3)Ga(0.2)P have a high density on the order of about 1 - 2 x 10/sq cm with a dominant size of about 10-15 nm for 7.5 ML growth. (1) These In(0.5)Al(0.3)Ga(0.2)P/InP quantum dots have previously been characterized by atomic-force microscopy, high-resolution transmission electron microscopy and photoluminescence. (2) We report here the 300 K operation of optically pumped red-emitting quantum dots using both double quantum dots active regions and quantum-dot coupled with InGaP quantum-well active regions. Optically and electrically pumped 300 K lasers have been obtained using this active region design; these lasers show improved operation compared to the lasers having QD-based active region with threshold current densities as low as J(sub t/l) ^ 0.5 KA/sq cm.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2002
- Accession Number
- ADP012674
Entities
People
- D. A. Kellogg
- G. Walter
- J. H. Ryou
- R. D. Heller
- Russell D. Dupuis
Organizations
- University of Texas at Austin