Effects of As Doping on Properties of ZnO Films
Abstract
A series of ZnO thin films with various deposition temperatures were prepared on (100) GaAs substrates by radio-frequency magnetron sputtering using ZnO target. The ZnO films were studied by field emission scanning electron microscope(FESEM), x-ray diffraction(XRD), photoluminescence(PL) cathodoluminescence(CL), and Hall measurements. The structural, optical, and electrical properties of the films were discussed as a function of the deposition temperature. With increasing temperature, the compressive stress in the films was released and their crystalline and optical properties were improved. From the depth profile of As measured by secondary ion mass spectrometry(SIMS), As doping was confirmed, and, in order to activate As dopant atoms. post-annealing treatment was performed. After annealing treatment, electrical and optical properties of the films were changed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2002
- Accession Number
- ADP012675
Entities
People
- D. H. Lee
- Do Kyung Hwang
- K. H. Bang
- K. S. Huh
- M. K. Hong
Organizations
- Yonsei University