Growth of the Single-Crystalline ZnO Films on Si (111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

Abstract

This report describes the growth of single-crystalline ZnO films on Si (111) substrates by plasma-assisted molecular-beam epitaxy. X-ray diffraction measurement shows that c-axis oriented ZnO films are easily grown on Si (111) substrates. However, in-plane random rotational domains are included in the ZnO films due to the inevitable oxidation of substrate surface at the initial stage of ZnO growth. By employing a thin CaF2 buffer layer between the ZnO films and Si substrates, we have succeeded in suppressing the generation of rotational domains and in obtaining an intense ultraviolet photoluminescence even at room temperature. These results indicate that the use of CaF2 buffer layer is promising for the growth of device-quality ZnO films on Si (111) substrates.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012676

Entities

People

  • Kazuto Koike
  • Masataka Inoue
  • Mitsuaki Yano
  • Shigehiko Sasa
  • Takanori Tanite

Organizations

  • Osaka Institute of Technology

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies
  • Sensors

DTIC Thesaurus Topics

  • Base Pressure
  • Bulk Materials
  • Diffraction
  • Electron Beams
  • Electron Diffraction
  • Electrons
  • Energy
  • Epitaxial Growth
  • Excitons
  • High Temperature
  • Materials
  • Measurement
  • Molecular Beam Epitaxy
  • Optical Properties
  • Spectra
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.