Properties of 2D and 3D Dielectric Structures Fabricated by Electrochemical Dissolution of III-V Compounds

Abstract

Porous layers and membranes representing 2D and 3D dielectric structures were fabricated on different III-V compounds (GaAs, InP, GaP) by electrochemical etching techniques. Nonlithographically fabricated ordered nanopore arrays in InP are reported for the first time. We show that the reflectance from nanostructured InP is lower than that from bulk InP in the spectral interval 1.5 - 2.2 eV. The artificial anisotropy induced by nanotexturization was studied in porous GaP membranes and the refractive indices for ordinary and extraordinary beams were evaluated.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADP012677

Entities

People

  • I. M. Tiginyanu
  • J. Carstensen
  • M. Christophersen
  • S. Langa
  • V. Sergentu

Organizations

  • Kiel University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Bulk Materials
  • Chemistry
  • Electrodes
  • Electrolytes
  • Electron Microscopes
  • Laser Beams
  • Materials
  • Membranes
  • Optical Properties
  • Refractive Index
  • Scanning Electron Microscopes
  • Second Harmonic Generation
  • Semiconductors
  • Spatial Distribution
  • Three Dimensional
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Nanocomposite Materials Science
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics