Generation and Recombination in Semimetallic Heterostructures

Abstract

Heterojunctions InAs-GaSb belong to the most interesting objects in the modern semiconductor physics. Due to the partial overlapping of the InAs conduction band with the GaSb valence band, a semimetallic electron-hole system is formed at the interface. Contrary to ordinaiy semimetals (Bi), electron and hole systems in these heterostructures are spatially separated. That is why the current flow through single heterojunctions and multilayer heterostructures is governed by generation-recombination processes at the InAs-GaSb interface. The aim of the present work is to calculate the interface genration-recombination (GR) rate. We considered the three-band Kane model Hamiltonaian within the envelope-function approximation to calculate GR rate.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012714

Entities

People

  • A. Shik
  • Manish Singh
  • W. Lau

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Conduction Bands
  • Conductivity
  • Demographic Cohorts
  • Electron Holes
  • Electrons
  • Energy Bands
  • Hard Copy
  • Heterojunctions
  • Metal-Semiconductor Junctions
  • Nanostructures
  • Physics
  • Semiconductor Physics
  • Semiconductors
  • Superlattices
  • Technical Information Centers
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene