Spectral Hole Burning of Eu2+ in Selectively Doped CaF2:Eu/CdF2 Superlattices

Abstract

It is demonstrated that persistent hole burning in the zero-phonon line of Eu2+ in SLs of CaF2:Eu/CdF2 with uniformly doped CaF2 layers is mainly due to tunneling of electrons from the 4f65d excited state of Eu2 to the conduction band of adjacent CdF2 layer. However in selectively doped suoerlattices (SLs), the two-step photoionization process dominates in the formation of spectral holes. Two mechanisms of spectral hole broadening were discussed. These are the Stark-shifting of the Eu2 f-d transition energy induced by internal electric field and phonon assisted transitions.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1998
Accession Number
ADP012715

Entities

People

  • A. Y. Khilko
  • N. S. Sokolov
  • R. S. Meltzer
  • S. M. Suturin
  • S. V. Gastev

Organizations

  • Russian Academy of Sciences

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Conduction Bands
  • Electric Fields
  • Electron Transfer
  • Electrons
  • Energy Bands
  • Energy Levels
  • Excitation
  • Free Electrons
  • Ionization
  • Lasers
  • Phonons
  • Photoionization
  • Quantum Tunneling
  • Radiation
  • Spatial Distribution
  • Superlattices
  • Transitions

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics